Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having 2D channel layer

Semiconductor device having 2D channel layer

US Patent 11855150 · Granted Dec 26, 2023

Estimated economic value: $1,986,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device having 2D channel layer2025
Memory device and computing method thereof2025
Semiconductor device with improved source/drain contact and method for forming t2025
Semiconductor device with improved source/drain contact and method for forming t2025
Semiconductor device and method for forming the same2025
Semiconductor device and method for forming the same2025
System for application protection and non-transitory machine-readable medium for2025
Control system using device controllers and device root to manage processing uni2025
IMS memory cell, IMS method and IMS memory device2025
Model protection system2025
Semiconductor structure and method for manufacturing having the conductive porti2025
Dynamic loading neural network inference at DRAM/on-bus SRAM/serial flash for po2025