Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device with improved source/drain contact and method for forming the same

Semiconductor device with improved source/drain contact and method for forming the same

US Patent 12376336 · Granted Jul 29, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device having 2D channel layer2025
Semiconductor device2025
Semiconductor device and method for forming the same2025
Semiconductor device and method for forming the same2025
Semiconductor device and method for forming the same2025
Semiconductor device and method for forming the same2025
Integrated circuit device and method for forming the same2024
Integrated circuit device and method for forming the same2024
Manufacturing method of semiconductor device2024
Semiconductor device, integrated circuit and methods of manufacturing the same2024
Semiconductor device having 2D channel layer2023
Semiconductor device having 2D channel layer2023