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Home › Transistors with ferroelectric spacer and methods of fabrication

Transistors with ferroelectric spacer and methods of fabrication

US Patent 11784251 · Granted Oct 10, 2023

Estimated economic value: $20,947,000 ⓘ

Assignee

Intel

Inventors

Seung Hoon Sung (151 patents)
Gilbert Dewey (398 patents)
Abhishek A. Sharma (241 patents)
Van H. Le (252 patents)
Jack T. Kavalieros (627 patents)

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