Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon carbide diode with reduced voltage drop, and manufacturing method thereof

Silicon carbide diode with reduced voltage drop, and manufacturing method thereof

US Patent 11715769 · Granted Aug 1, 2023

Estimated economic value: $28,691,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Contextual formation of a junction barrier diode and a Schottky diode in a MPS d2025
Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct 2025
Overvoltage protection device2025
Wide band gap semiconductor electronic device having a junction-barrier Schottky2025
Ohmic contact formation in a SiC-based electronic device2025
Scalable MPS device based on SiC2025
JBS device with improved electrical performances, and manufacturing process of t2025
Silicon carbide power device with improved robustness and corresponding manufact2024
Method for manufacturing a uv-radiation detector device based on sic, and uv- ra2024
Silicon carbide diode with reduced voltage drop, and manufacturing method thereo2024
Silicon carbide diode with reduced voltage drop, and manufacturing method thereo2024
Semiconductor MPS diode with reduced current-crowding effect and manufacturing m2024