Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon carbide power device with improved robustness and corresponding manufacturing process

Silicon carbide power device with improved robustness and corresponding manufacturing process

US Patent 12125762 · Granted Oct 22, 2024

Estimated economic value: $17,149,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

4H-SiC electronic device with improved short-circuit performances, and manufactu2025
4H-SiC electronic device with improved short-circuit performances, and manufactu2025
Method for manufacturing a SiC electronic device with reduced handling steps, an2025
Method for manufacturing a SiC electronic device with reduced handling steps, an2025
Manufacturing method of a semiconductor device with efficient edge structure2025
Manufacturing method of a semiconductor device with efficient edge structure2025
Manufacturing method of a semiconductor device with efficient edge structure2025
Manufacturing method of an element of an electronic device having improved relia2025
Manufacturing method of an element of an electronic device having improved relia2025
Silicon carbide vertical conduction MOSFET device for power applications and man2025
Silicon carbide vertical conduction MOSFET device for power applications and man2025
Ohmic contact formation in a SiC-based electronic device2025