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Home › Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct contact with the 4H—SiC material

Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct contact with the 4H—SiC material

US Patent 12374545 · Granted Jul 29, 2025

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