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Home › SiC growth apparatus comprised of a base having a plurality of graphite plates having anisotropy of a thermal expansion coefficient and method of manufacturing a SiC crystal using the apparatus

SiC growth apparatus comprised of a base having a plurality of graphite plates having anisotropy of a thermal expansion coefficient and method of manufacturing a SiC crystal using the apparatus

US Patent 11708645 · Granted Jul 25, 2023

Estimated economic value: $187,000 ⓘ

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