Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12215439 | SiC epitaxial wafer | Hiromasa SUO, Tamotsu Yamashita | 2025-02-04 |
| 12132085 | SiC substrate and sic epitaxial wafer | Hiromasa SUO | 2024-10-29 |
| 11866846 | SiC substrate and SiC epitaxial wafer | Hiromasa SUO, Tamotsu Yamashita | 2024-01-09 |
| 11733319 | Magnetic sensor | Sho Tonegawa, Akira Sakawaki | 2023-08-22 |
| 11708645 | SiC growth apparatus comprised of a base having a plurality of graphite plates having anisotropy of a thermal expansion coefficient and method of manufacturing a SiC crystal using the apparatus | Nobutoshi Sudoh | 2023-07-25 |
| 11708646 | Crucible having an improved crystal growth base for manufacturing silicon carbide single crystal and method of use | — | 2023-07-25 |
| 11692266 | SiC chemical vapor deposition apparatus | Yoshikazu Umeta, Yoshishige OKUNO | 2023-07-04 |
| 11459669 | SiC ingot and method of manufacturing SiC ingot | Yohei Fujikawa, Yoshishige OKUNO | 2022-10-04 |
| 11453957 | Crystal growing apparatus and crucible having a main body portion and a first portion having a radiation rate different from that of the main body portion | Yoshishige OKUNO, Tomohiro Shonai | 2022-09-27 |
| 11441235 | Crystal growing apparatus and crucible having a main body portion and a low radiation portion | Yoshishige OKUNO, Tomohiro Shonai | 2022-09-13 |
| 10988857 | SiC single crystal growth apparatus containing movable heat-insulating material and growth method of SiC single crystal using the same | Yoshishige OKUNO, Tomohiro Shonai | 2021-04-27 |