Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Crucible having an improved crystal growth base for manufacturing silicon carbide single crystal and method of use

Crucible having an improved crystal growth base for manufacturing silicon carbide single crystal and method of use

US Patent 11708646 · Granted Jul 25, 2023

Estimated economic value: $187,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

SiC epitaxial wafer2025
SiC substrate and sic epitaxial wafer2024
SiC substrate and SiC epitaxial wafer2024
Magnetic sensor2023
SiC growth apparatus comprised of a base having a plurality of graphite plates h2023
SiC chemical vapor deposition apparatus2023
SiC ingot and method of manufacturing SiC ingot2022
Crystal growing apparatus and crucible having a main body portion and a first po2022
Crystal growing apparatus and crucible having a main body portion and a low radi2022
SiC single crystal growth apparatus containing movable heat-insulating material 2021