Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Bottom source/drain etch with fin-cut-last-VTFET

Bottom source/drain etch with fin-cut-last-VTFET

US Patent 11695059 · Granted Jul 4, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transistors with backside source/drain contact and spacer2025
Air pump cover and air pump2025
Stacked FETS with contact placeholder structures2025
Condenser for drying equipment, and drying equipment2025
Fork sheet device with wrapped source and drain contact to prevent NFET to PFET 2025
Fork sheet device with wrapped source and drain contact to prevent NFET to PFET 2025
Shower pump2025
Cross bar vertical FETs2025
Backside gate via structure using self-aligned scheme2025
Stacked semiconductor devices with topside and backside interconnect wiring2025
Toy car2025
Vertically stacked fin semiconductor devices2025