Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming assemblies having heavily doped regions

Methods of forming assemblies having heavily doped regions

US Patent 11658033 · Granted May 23, 2023

Estimated economic value: $14,313,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory having a continuous channel2025
Signal lines in memory devices and methods for forming the same2025
Integrated structures2024
Memory cell structure of a three-dimensional memory device2024
Plasma doping of gap fill materials2024
Devices, systems and methods for electrostatic force enhanced semiconductor bond2024
Three-dimensional memory devices and fabricating methods thereof2024
Multiple-stack three-dimensional memory device and fabrication method thereof2024
Method for forming channel hole plug of three-dimensional memory device2024
Vertical memory devices2024
Ferroelectric memory devices with reduced edge defects and methods for forming t2023
Method of fabrication thereof a multi-level vertical memory device including int2023