Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › III-N transistor structures with stepped cap layers

III-N transistor structures with stepped cap layers

US Patent 11594625 · Granted Feb 28, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Lateral III-nitride devices including a vertical gate module2025
III-N based material structures, methods, devices and circuit modules based on s2025
III-N based material structures, methods, devices and circuit modules based on s2025
Method to control the relaxation of thick films on lattice-mismatched substrates2025
Method to control the relaxation of thick films on lattice-mismatched substrates2025
Semiconductor device for RF integrated circuit2024
Semiconductor device for RF integrated circuit2024
High mobility group-III nitride transistors with strained channels2024
High mobility group-III nitride transistors with strained channels2024
Devices for integrated front-end circuits2024
Devices for integrated front-end circuits2024
Lacosamide pharmaceutical composition and dosage form thereof2024