Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field effect transistor using transition metal dichalcogenide and a method for forming the same

Field effect transistor using transition metal dichalcogenide and a method for forming the same

US Patent 11581185 · Granted Feb 14, 2023

Estimated economic value: $10,069,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device with two-dimensional materials2025
Semiconductor device and method of manufacturing semiconductor device2025
Semiconductor device and method of manufacturing semiconductor device2025
Semiconductor device and method of manufacturing semiconductor device2025
Forming semiconductor structures with two-dimensional materials2025
Resistive memory devices using a carbon-based conductor line and methods for for2025
Semiconductor structure of stacked two-dimensional material layers2025
Manufacturing method of semiconductor device including hBNC layer, and manufactu2025
Semiconductor device2025
Fin field-effect transistor device with low-dimensional material and method2025
Pellicle for an EUV lithography mask and a method of manufacturing thereof2024
Nano transistors with source/drain having side contacts to 2-D material2024