Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nano transistors with source/drain having side contacts to 2-D material

Nano transistors with source/drain having side contacts to 2-D material

US Patent 12170323 · Granted Dec 17, 2024

Estimated economic value: $28,729,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hand tool and method for manufacturing the same2025
2D-channel transistor structure with asymmetric substrate contacts2025
Control circuit, memory system and control method2025
Self-aligned contact for embedded memory2025
Self-aligned contact for embedded memory2025
Semiconductor device structure with hybrid fins2025
Semiconductor device structure with hybrid fins2025
Memory devices2025
Memory devices2025
Memory devices2025
Dielectric walls for complementary field effect transistors2025
Operating methods, memory controllers, and memory systems2025