Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Supportive layer in source/drains of FinFET devices

Supportive layer in source/drains of FinFET devices

US Patent 11476331 · Granted Oct 18, 2022

Estimated economic value: $11,628,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Connected mode discontinuous reception settings for periodic traffic with jitter2025
Synchronization signal block (SSB) in full-duplex2025
Semiconductor Fin-like field-effect transistor (FinFET) device including source/2025
Semiconductor device and method2025
FETS and methods of forming FETS2025
Semiconductor device and method2025
Nano-structure transistors with air inner spacers and methods forming same2025
Source/drain structure for semiconductor device2025
Source/drain structure for semiconductor device2025
Source/drain structure for semiconductor device2025
Source/drain regions of semiconductor device and method of forming the same2025
Fin bending reduction through structure design2025