Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nano-structure transistors with air inner spacers and methods forming same

Nano-structure transistors with air inner spacers and methods forming same

US Patent 12396242 · Granted Aug 19, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Connected mode discontinuous reception settings for periodic traffic with jitter2025
Semiconductor device and method of manufacture2025
Apparatus and method for use with a substrate chamber2025
Annealing apparatus and method of operating the same2025
Apparatus and method for use with a substrate chamber2025
Semiconductor device and methods of forming the same2025
Synchronization signal block (SSB) in full-duplex2025
Method of manufacturing a source/drain of a semiconductor device using multiple 2025
Semiconductor device and manufacturing method thereof2025
Semiconductor device having multi-layer epitaxial structures with different latt2025
Systems, methods, and semiconductor devices2025
Shallow trench isolation forming method and structures resulting therefrom2025