Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacer

Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacer

US Patent 11398384 · Granted Jul 26, 2022

Estimated economic value: $15,317,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Metal gates for multi-gate semiconductor devices and method thereof2025
Method of manufacturing a semiconductor device2025
Methods for doping high-K metal gates for tuning threshold voltages2025
P-type semiconductor devices with different threshold voltages and methods of fo2025
Structure having gate spacers with projecting portions extending into a gate die2025
Structure having gate spacers with projecting portions extending into a gate die2025
Structure having gate spacers with projecting portions extending into a gate die2025
Post gate dielectric processing for semiconductor device fabrication2025
Post gate dielectric processing for semiconductor device fabrication2025
Method of manufacturing semiconductor devices and semiconductor devices2025
Method of manufacturing semiconductor devices and semiconductor devices2025
Forming low-resistance capping layer over metal gate electrode2025