Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a silicon carbide device and wafer composite including laser modified zones in a handle substrate

Method of manufacturing a silicon carbide device and wafer composite including laser modified zones in a handle substrate

US Patent 11373863 · Granted Jun 28, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Fastening device for releasable connection to a perforated rail of an aircraft a2025
Power semiconductor device and method of producing a power semiconductor device2025
Method of manufacturing a semiconductor package, die, and die package2025
Semiconductor device with a porous portion, wafer composite and method of manufa2025
Semiconductor device with a porous portion, wafer composite and method of manufa2025
Semiconductor device2025
Method of manufacturing silicon carbide semiconductor devices2025
Silicon carbide components and methods for producing silicon carbide components2025
Methods of forming semiconductor devices in a layer of epitaxial silicon carbide2025
Manufacturing and reuse of semiconductor substrates2025
Manufacturing and reuse of semiconductor substrates2025
Chip package and method of forming a chip package2024