Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming transistor devices comprising a single semiconductor structure and the resulting devices

Methods of forming transistor devices comprising a single semiconductor structure and the resulting devices

US Patent 11349030 · Granted May 31, 2022

Estimated economic value: $71,252,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Structure having different gate dielectric widths in different regions of substr2025
Semiconductor device with different sized epitaxial structures2025
Transistors with multiple silicide layers2025
Transistors with multiple silicide layers2025
Silicon germanium fins and integration methods2025
Silicon germanium fins and integration methods2025
Device structures for a high-voltage semiconductor device2025
Lateral bipolar transistors2025
High-voltage semiconductor device structures2025
Trench isolation having three portions with different materials, and LDMOS FET i2025
Bipolar junction transistors with a nanosheet intrinsic base2025
Bipolar junction transistors with a nanosheet intrinsic base2025