Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Bipolar junction transistors with a nanosheet intrinsic base

Bipolar junction transistors with a nanosheet intrinsic base

US Patent 12272740 · Granted Apr 8, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Structure having different gate dielectric widths in different regions of substr2025
Semiconductor device with different sized epitaxial structures2025
Transistors with multiple silicide layers2025
Transistors with multiple silicide layers2025
Silicon germanium fins and integration methods2025
Silicon germanium fins and integration methods2025
Silicon germanium fins and integration methods2025
Device structures for a high-voltage semiconductor device2025
Device structures for a high-voltage semiconductor device2025
Lateral bipolar transistors2025
High-voltage semiconductor device structures2025
Trench isolation having three portions with different materials, and LDMOS FET i2025