Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Single metallization scheme for gate, source, and drain contact integration

Single metallization scheme for gate, source, and drain contact integration

US Patent 11309221 · Granted Apr 19, 2022

Estimated economic value: $6,872,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gate-all-around field-effect-transistor with wrap-around-channel inner spacer2025
Integration of nanosheets with bottom dielectric isolation and ideal diode2025
Wraparound contact with reduced distance to channel2025
FinFET gate cut after dummy gate removal2025
Strain generation and anchoring in gate-all-around field effect transistors2025
Formation of trench silicide source or drain contacts without gate damage2025
Stressed material within gate cut region2025
Gate-all-around nanosheet field effect transistor integrated with fin field effe2025
Late replacement bottom isolation for nanosheet devices2025
Vertical FET replacement gate formation with variable fin pitch2025
Stacked planar field effect transistors with 2D material channels2025
Field effect transistors with bottom dielectric isolation2025