Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density

Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density

US Patent 11261536 · Granted Mar 1, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Silicon carbide substrate and method of growing SiC single crystal boules2025
Silicon carbide substrate and method of growing SiC single crystal boules2025
Silicon carbide substrate and method of growing SiC single crystal boules2025
Silicon carbide substrate and method of growing SiC single crystal boules2025
SiC crystals with an optimal orientation of lattice planes for fissure reduction2025
SiC crystals with an optimal orientation of lattice planes for fissure reduction2025
Method for simultaneously manufacturing more than one single crystal of a semico2024
Support element for fastening an interior lining part to a component of a vehicl2023
Silicon carbide substrate and method of growing SiC single crystal boules2023
Silicon carbide substrate and method of growing SiC single crystal boules2023
Silicon carbide substrate and method of growing SiC single crystal boules2023
Silicon carbide substrate and method of growing SiC single crystal boules2023