Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating a ferroelectric memory and method for co-fabrication of a ferroelectric memory and of a resistive memory

Method for fabricating a ferroelectric memory and method for co-fabrication of a ferroelectric memory and of a resistive memory

US Patent 11145663 · Granted Oct 12, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for making an electronic device with superconductor qubit(s) including at2025
Data logic processing circuit integrated in a data storage circuit2025
Method for manufacturing resistive memory cells2025
Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory2025
Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory2025
Method for increasing the surface roughness of a metal layer2025
Method for manufacturing a microelectronic device comprising a plurality of resi2024
Method for increasing the surface roughness of a metal layer2024
Memory circuit comprising a plurality of 1T1R memory cells2024
Resistive memory with a switching zone between two dielectric regions having dif2024
Matrix of elementary switches forming a message, associated reading and writing 2024
Transistor characterization2023