Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing a microelectronic device comprising a plurality of resistive memory points configured to form a physical unclonable function and said device

Method for manufacturing a microelectronic device comprising a plurality of resistive memory points configured to form a physical unclonable function and said device

US Patent 12120889 · Granted Oct 15, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Coherent sampling true random number generation in FD-SOI technology2025
Method for manufacturing resistive memory cells2025
Method for manufacturing resistive memory cells2025
Filamentary type non-volatile memory device2023
Method for manufacturing a microelectronic device integrating a physical unclona2022
Method for manufacturing a microelectronic device integrating a physical unclona2022
Apparatus for depositing chalcogenide thin films2022
OxRAM oxide based resistive random access memory cell and associated manufacturi2022
OxRAM oxide based resistive random access memory cell and associated manufacturi2022
Method for securing an integrated circuit upon making it2022
Method for securing an integrated circuit upon making it2022
Method for fabricating a ferroelectric memory and method for co-fabrication of a2021