Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High resistivity single crystal silicon ingot and wafer having improved mechanical strength

High resistivity single crystal silicon ingot and wafer having improved mechanical strength

US Patent 11142844 · Granted Oct 12, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Axial positioning of magnetic poles while producing a silicon ingot2025
Ingot puller apparatus that axially position magnetic poles2025
Method and electronic device for recognizing product2025
Use of arrays of quartz particles during single crystal silicon ingot production2025
Methods for producing a product ingot having low oxygen content2025
Methods for producing a product ingot having low oxygen content2025
DC-DC buck converter and operating method thereof2025
High resistivity silicon-on-insulator substrate comprising an isolation region2025
DC-DC converter and power device including the same2025
Systems for production of low oxygen content silicon2025
Systems and methods for controlling a gas dopant vaporization rate during a crys2025
DC-to-DC converter and integrated circuit including the same2025