Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Interface-less contacts to source/drain regions and gate electrode over active portion of device

Interface-less contacts to source/drain regions and gate electrode over active portion of device

US Patent 11139385 · Granted Oct 5, 2021

Estimated economic value: $5,888,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Enhanced linerless vias2025
Gate-all-around field-effect-transistor with wrap-around-channel inner spacer2025
Semiconductor device having hybrid middle of line contacts2025
Narrowing single diffusion break2025
Wraparound contact with reduced distance to channel2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
In-situ chip design for pulse IV self-heating evaluation2025
Method and structure of forming independent contact for staggered CFET2025
Formation of trench silicide source or drain contacts without gate damage2025
Semiconductor device with power via2025
Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transist2025
Stacked FETS including devices with thick gate oxide2025