Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of processing a silicon carbide containing crystalline substrate, silicon carbide chip, and processing chamber

Method of processing a silicon carbide containing crystalline substrate, silicon carbide chip, and processing chamber

US Patent 11077525 · Granted Aug 3, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Component and method of manufacturing a component using an ultrathin carrier2022
Silicon carbide devices and methods for manufacturing the same2022
Silicon carbide devices and methods for manufacturing the same2022
Silicon carbide devices and methods for manufacturing the same2022
Methods of forming a silicon-insulator layer and semiconductor device having the2021
Semiconductor devices including a metal silicide layer and methods for manufactu2021
Semiconductor devices including a metal silicide layer and methods for manufactu2021
Integrated circuit substrate and method for manufacturing the same2020
Integrated circuit substrate and method for manufacturing the same2020
Magnetic phase change material for heat dissipation2020
Segmented edge protection shield2020
Method for use in manufacturing a semiconductor device die2019