Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a semiconductor device using layered etching and repairing of damaged portions

Method of forming a semiconductor device using layered etching and repairing of damaged portions

US Patent 10985019 · Granted Apr 20, 2021

Estimated economic value: $19,156,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Automated detection system for acute ischemic stroke2025
Semiconductor device and method for forming the same2025
Semiconductor device and manufacturing method thereof2025
Integrated circuit structure and method for forming the same2025
Integrated circuit structure and method for forming the same2025
Integrated circuit structure and method for forming the same2025
Method for forming 2-D material semiconductor device with improved source/drain 2024
Method for reducing Schottky barrier height and semiconductor device with reduce2023
Semiconductor device and manufacturing method thereof2023
Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operatio2023
Semiconductor memory device2023
Method for forming stressor, semiconductor device having stressor, and method fo2022