Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio

Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio

US Patent 10964536 · Granted Mar 30, 2021

Estimated economic value: $32,966,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Doped titanium nitride materials for dram capacitors, and related semiconductor 2025
Doped titanium nitride materials for dram capacitors, and related semiconductor 2025
Methods of forming nanostructures utilizing self-assembled nucleic acids2025
Method of forming photonics structures2025
Epitaxial single crystalline silicon growth for memory arrays2025
String driver assemblies including two-dimensional materials, and related memory2025
Epitaxial single crystalline silicon growth for a horizontal access device2025
Epitaxial single crystalline silicon growth for a horizontal access device2025
Driver placement in memories having stacked memory arrays2025
Capacitors with electrodes having a portion of material removed, and related sem2025
Channel conduction in semiconductor devices2024
Semiconductor devices including ferroelectric materials2024