Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon carbide device with an implantation tail compensation region

Silicon carbide device with an implantation tail compensation region

US Patent 10957768 · Granted Mar 23, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor component having a SiC semiconductor body2025
Silicon carbide device with stripe-shaped gate electrode and source metallizatio2025
Method of manufacturing silicon carbide semiconductor devices2025
Vertical power semiconductor device including silicon carbide (sic) semiconducto2025
Vertical power semiconductor device including silicon carbide (sic) semiconducto2025
Semiconductor device having a transistor with trenches and mesas2025
RC snubber with poly silicon resistor and capacitor formed from junction termina2025
Silicon carbide device with a stripe-shaped trench gate structure2025
Silicon carbide device with a stripe-shaped trench gate structure2025
Silicon carbide device with a stripe-shaped trench gate structure2025
Silicon carbide device with a stripe-shaped trench gate structure2025
Semiconductor device including current spread region2024