Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Selective gas etching for self-aligned pattern transfer

Selective gas etching for self-aligned pattern transfer

US Patent 10930504 · Granted Feb 23, 2021

Estimated economic value: $13,259,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Selective gas etching for self-aligned pattern transfer2025
Selective gas etching for self-aligned pattern transfer2025
Vertical field effect transistor with minimal contact to gate erosion2025
Dual-metal ultra thick metal (UTM) structure2025
Metal hard mask for precise tuning of mandrels2025
Methods for preparing small features on a substrate2025
MRAM top electrode structure with liner layer2025
Two-color self-aligned double patterning (SADP) to yield static random access me2025
Alternating hardmasks for tight-pitch line formation2025
Embedded metal contamination removal from BEOL wafers2025
Embedded metal contamination removal from BEOL wafers2025
Backside power rails and power distribution network for density scaling2025