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Home › Three-dimensional (3D), vertically-integrated field-effect transistors (FETs) for complementary metal-oxide semiconductor (CMOS) cell circuits

Three-dimensional (3D), vertically-integrated field-effect transistors (FETs) for complementary metal-oxide semiconductor (CMOS) cell circuits

US Patent 10861852 · Granted Dec 8, 2020

Estimated economic value: $25,945,000 ⓘ

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