Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabrication of phase change memory cell in integrated circuit

Fabrication of phase change memory cell in integrated circuit

US Patent 10840447 · Granted Nov 17, 2020

Estimated economic value: $2,639,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

MRAM structure with a T-shaped ferromagnetic layer2025
Isolation rail between backside power rails2025
Back-end-of-line thin film resistor2025
Back-end-of-line thin film resistor2025
MRAM bottom electrode contact with taper profile2025
Top via interconnect with airgap2025
MRAM device with octagon profile2025
Dual-damascene fav interconnects with dielectric plug2025
Top via containing random-access memory cross-bar array2025
Magneto-resistive random access memory with hemispherical top electrode2025
Magnetoresistive random-access memory (MRAM) with preserved underlying dielectri2025
Damascene MRAM device2025