Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High-voltage transistor device with thick gate insulation layers

High-voltage transistor device with thick gate insulation layers

US Patent 10811433 · Granted Oct 20, 2020

Estimated economic value: $150,333,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

IC structure for connected capacitances and method of forming same2025
Semiconductor structure including sectioned well region2024
Lidar system including light emitter for multiple receiving units2024
Wavelength adaptive narrow band optical filter for a LIDAR system2024
Method of making and using a reusable mold for fabrication of optical elements2023
Lidar system with crosstalk reduction comprising a power supply circuit layer st2023
Eight-transistor static random access memory cell2022
Extended-drain field-effect transistors including a floating gate2021
Semiconductor devices having silicon/germanium active regions with different ger2021
IC product with a novel bit cell design and a memory array comprising such bit c2021
Semiconductor device with interconnect to source/drain2021
Well contact cell with doped tap region separated from active region, and method2021