Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device

Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device

US Patent 10770550 · Granted Sep 8, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Insulating transformer2025
Silicon carbide epitaxial substrate2025
Gate driver, insulation module, low-voltage circuit unit, and high-voltage circu2025
Semiconductor device2024
Operation information acquisition device, operation information acquisition meth2024
Sealing method for liquid inlet port of power storage device2024
Method for manufacturing silicon carbide epitaxial substrate and method for manu2024
Silicon carbide epitaxial substrate and method for manufacturing silicon carbide2024
Silicon carbide epitaxial substrate2024
Semiconductor device2023
Method for manufacturing silicon carbide epitaxial substrate and method for manu2023
Semiconductor device2023