Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances

Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances

US Patent 10686062 · Granted Jun 16, 2020

Estimated economic value: $1,294,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High density shield gate transistor structure and method of making2025
Semiconductor package having wettable lead flanks and tie bars and method of mak2025
Bottom source trench MOSFET with shield electrode2024
Semiconductor package having thin substrate and method of making the same2023
SiC MOSFET with reduced channel length and high Vth2023
IGBT light load efficiency2023
Semiconductor device incorporating epitaxial layer field stop zone2023
Wafer level chip scale semiconductor package2023
Reusable wide bandgap semiconductor substrate2023
DMOS FET chip scale package and method of making the same2023
Sawtooh electric field drift region structure for planar and trench power semico2023
Sawtooh electric field drift region structure for planar and trench power semico2023