Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › I-shaped gate electrode for improved sub-threshold MOSFET performance

I-shaped gate electrode for improved sub-threshold MOSFET performance

US Patent 10608110 · Granted Mar 31, 2020

Estimated economic value: $21,150,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

ESD protection circuit with isolated SCR for negative voltage operation2024
ESD protection circuit with isolated SCR for negative voltage operation2022
ESD protection circuit with isolated SCR for negative voltage operation2021
Diffusion resistor with reduced voltage coefficient of resistance and increased 2018
ESD protection circuit with isolated SCR for negative voltage operation2018
Low-cost CMOS structure with dual gate dielectrics and method of forming the CMO2018
I-shaped gate electrode for improved sub-threshold MOSFET performance2017
High performance isolated vertical bipolar junction transistor and method for fo2017
Drain extended CMOS with counter-doped drain extension2017
Low cost demos transistor with improved CHC immunity2017
High performance isolated vertical bipolar junction transistor and method for fo2016
Low-cost CMOS structure with dual gate dielectrics and method of forming the CMO2016