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Home › Non-volatile memory having an erase gate formed between two floating gates with two word lines formed on other sides and a method for forming the same

Non-volatile memory having an erase gate formed between two floating gates with two word lines formed on other sides and a method for forming the same

US Patent 10535670 · Granted Jan 14, 2020

Estimated economic value: $2,940,000 ⓘ

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