Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming semiconductor device structure having conductive structure with twin boundaries

Method for forming semiconductor device structure having conductive structure with twin boundaries

US Patent 10475742 · Granted Nov 12, 2019

Estimated economic value: $4,935,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Detection module2025
Method for recovering valuable material from perovskite solar cell2025
Package component2025
Array substrate and touch display device2025
Phase-change memory cell and method for fabricating the same2025
Phase-change memory cell and method for fabricating the same2025
Display panel and driving method thereof, and display device2025
Light emitting substrate, wiring substrate and display device2025
Through-circuit Vias in interconnect structures2025
Display substrate, display panel, and display device2025
Light-emitting substrate, backlight source and display device2025
Through-circuit vias in interconnect structures2025