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Home › Methods, apparatus and system for forming a FinFET device comprising a first portion capable of operating at a first voltage and a second portion capable of operating at a second voltage

Methods, apparatus and system for forming a FinFET device comprising a first portion capable of operating at a first voltage and a second portion capable of operating at a second voltage

US Patent 10438853 · Granted Oct 8, 2019

Estimated economic value: $23,319,000 ⓘ

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