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Home › Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling

Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling

US Patent 10217824 · Granted Feb 26, 2019

Estimated economic value: $15,190,000 ⓘ

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