Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › FINFET circuit structures with vertically spaced transistors and fabrication methods

FINFET circuit structures with vertically spaced transistors and fabrication methods

US Patent 10147802 · Granted Dec 4, 2018

Estimated economic value: $15,683,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Global-shutter pixel2025
Pixel with vertical transfer structure for dark current improvement, an image se2025
Central deep trench isolation shift2025
High dynamic range, backside-illuminated, low crosstalk image sensor with walls 2025
Distributed synchronous training architecture using stale weights2025
Formation of trench silicide source or drain contacts without gate damage2025
CMOS devices with asymmetrically passivated isolation structure and methods ther2025
Image sensor diagonal isolation structures2025
Dual depth junction structures and process methods2025
Liner and barrier layer in dual damascene cu interconnect for enhanced EM and pr2025
Notch shape of trench gate bottom corner for better breakdown voltage of power M2024
Uniform threshold voltage non-planar transistors2024