Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field effect transistor (FET) structure with integrated gate connected diodes

Field effect transistor (FET) structure with integrated gate connected diodes

US Patent 10103137 · Granted Oct 16, 2018

Estimated economic value: $30,930,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Amplifier bias circuit2025
Common gate input circuit for III/V D-mode buffered FET logic (BFL)2024
Asymmetrically angled gate structure and method for making same2023
Field effect transistor having improved gate structures2022
Ohmic alloy contact region sealing layer2021
Field effect transistor (FET) structure with integrated gate connected diodes2020
Field effect transistor (FET) structure with integrated gate connected diodes2020
Amplifier having a switchable current bias circuit2019
Bias circuitry for depletion mode amplifiers2019
Bias circuitry for depletion mode amplifiers2018
Field effect transistor (FET) structure with integrated gate connected diodes2017
Field effect transistor (FET) structure with integrated gate connected diodes2017