Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and structure to provide integrated long channel vertical FinFET device

Method and structure to provide integrated long channel vertical FinFET device

US Patent 10014409 · Granted Jul 3, 2018

Estimated economic value: $6,951,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Capacitive wireless power transfer coupler and application thereof2025
Isolation structures in multi-gate semiconductor devices and methods of fabricat2025
Enlarged backside contact2025
Methods of forming a semiconductor device with corner isolation protection2025
Capacitive coupler with asymmetric insulating layers and wireless power transfer2025
Semiconductor device with S/D bottom isolation and methods of forming the same2024
Semiconductor device structure with metal gate stack2024
Stress-inducing silicon liner in semiconductor devices2024
Semiconductor device with air gaps between metal gates and method of forming the2024
Air gap seal for interconnect air gap and method of fabricating thereof2024
Isolation structures in multi-gate semiconductor devices and methods of fabricat2024
Semiconductor device structure and method for forming the same2024