{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices", "item": "https://www.patentleaderboard.com/patent/10014231"}]}
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Home › Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices

Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices

US Patent 10014231 · Granted Jul 3, 2018

Estimated economic value: $20,406,000 ⓘ

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