KA

Koji Arita

PA Panasonic: 34 patents #418 of 21,108Top 2%
Sumitomo Electric Industries: 31 patents #458 of 21,551Top 3%
SY Symetrix: 15 patents #9 of 73Top 15%
NE Nec Electronics: 10 patents #41 of 1,789Top 3%
NE Nec: 4 patents #3,388 of 14,502Top 25%
NU National University Corporation Tohoku University: 2 patents #36 of 170Top 25%
SC Semiconductor Technology Academic Research Center: 2 patents #50 of 254Top 20%
RE Renesas Electronics: 1 patents #2,739 of 4,529Top 65%
KC Kojundo Chemical Laboratory Co.: 1 patents #5 of 12Top 45%
KS Kobe Steel: 1 patents #937 of 1,773Top 55%
📍 Kobe, CO: #1 of 3 inventorsTop 35%
Overall (All Time): #20,719 of 4,157,543Top 1%
84
Patents All Time

Issued Patents All Time

Showing 26–50 of 84 patents

Patent #TitleCo-InventorsDate
6927495 Semiconductor device and method of manufacturing same Masayoshi Tagami, Hidenobu Miyamoto 2005-08-09
6876030 Semiconductor memory device Kiyoshi Uchiyama, Yasuhiro Shimada, Tatsuo Otsuki 2005-04-05
6864146 Metal oxide integrated circuit on silicon germanium substrate Carlos A. Paz de Araujo, Masamichi Azuma, Larry D. McMillan 2005-03-08
6849521 Method for manufacturing a semiconductor device Yasuhiro Uemoto 2005-02-01
6639262 Metal oxide integrated circuit on silicon germanium substrate Carlos A. Paz de Araujo, Masamichi Azuma, Larry D. McMillan 2003-10-28
6582972 Low temperature oxidizing method of making a layered superlattice material Vikram Joshi, Jolanta Bozena Celinska, Narayan Solayappan, Larry D. McMillan, Carlos A. Paz de Araujo 2003-06-24
6580632 Semiconductor memory device, method for driving the same and method for fabricating the same Yasuhiro Shimada, Kiyoshi Uchiyama 2003-06-17
6541375 DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention Shinichiro Hayashi 2003-04-01
6537830 Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material Carlos A. Paz de Araujo, Larry D. McMillan, Masamichi Azuma 2003-03-25
6469334 Ferroelectric field effect transistor Shinichiro Hayashi, Tatsuo Otsuki, Carlos A. Paz de Araujo 2002-10-22
6468875 Fabrication method of capacitor for integrated circuit Yasuhiro Uemoto, Eiji Fujii, Yoshihisa Nagano, Yasuhiro Shimada, Masamichi Azuma +2 more 2002-10-22
6404003 Thin film capacitors on silicon germanium substrate Larry D. McMillan, Carlos A. Paz de Araujo, Masamichi Azuma 2002-06-11
6396095 Semiconductor memory and method of driving semiconductor memory Yasuhiro Shimada, Kiyoshi Uchiyama 2002-05-28
6380580 Method of making a thin film capacitor with an improved top electrode 2002-04-30
6372518 Method using unreactive gas anneal and low temperature pretreatment for fabricating layered superlattice materials and making electronic devices including same Toru Nasu 2002-04-16
6358758 Low imprint ferroelectric material for long retention memory and method of making the same Shinichiro Hayashi, Joseph D. Cuchiaro, Carlos A. Paz de Araujo 2002-03-19
6333528 Semiconductor device having a capacitor exhibiting improved moisture resistance Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, Toru Nasu, Akihiro Matsuda +4 more 2001-12-25
6333537 Thin film capacitor with an improved top electrode 2001-12-25
6326315 Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same Kiyoshi Uchiyama, Narayan Solayappan, Carlos A. Paz de Araujo 2001-12-04
6306667 Method for forming a capacitor in a semiconductor device Yoshitake Kato 2001-10-23
6294438 Semiconductor device having capacitor and manufacturing method thereof Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, Toru Nasu, Akihiro Matsuda +4 more 2001-09-25
6291290 Thin film capacitor with an improved top electrode and method of forming the same 2001-09-18
6281534 Low imprint ferroelectric material for long retention memory and method of making the same Shinichiro Hayashi, Joseph D. Cuchiaro, Carlos A. Paz de Araujo 2001-08-28
6255121 Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor Shinichiro Hayashi, Tatsuo Otsuki, Carlos A. Paz de Araujo 2001-07-03
6236076 Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material Carlos A. Paz de Araujo 2001-05-22