Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8183643 | Semiconductor device having silicide layer completely occupied amorphous layer formed in the substrate and an interface junction of (111) silicon plane | Takashi Ichimori | 2012-05-22 |
| 7759228 | Semiconductor device and method of manufacturing the same | Naoharu Sugiyama, Tsutomu Tezuka | 2010-07-20 |
| 7479682 | Structure of a field effect transistor having metallic silicide and manufacturing method thereof | Takashi Ichimori | 2009-01-20 |
| 7244996 | Structure of a field effect transistor having metallic silicide and manufacturing method thereof | Takashi Ichimori | 2007-07-17 |
| 7199030 | Method of manufacturing semiconductor device | Satoshi Ikeda, Yutaka Kamata, Ikuo Kurachi | 2007-04-03 |
| 6861322 | Method of manufacturing a semiconductor device | Takashi Ichimori, Toshiyuki Nakamura | 2005-03-01 |
| 6750088 | SOI MOS field effect transistor and manufacturing method therefor | Takashi Ichimori | 2004-06-15 |
| 6531743 | SOI MOS field effect transistor and manufacturing method therefor | Takashi Ichimori | 2003-03-11 |
| 6274470 | Method for fabricating a semiconductor device having a metallic silicide layer | Takashi Ichimori | 2001-08-14 |
| 6197601 | Method of correcting temperature of semiconductor substrate | — | 2001-03-06 |
| 6037588 | Method for testing semiconductor device | Guo Liu, Hidetsugu Uchida, Izumi Aikawa, Naokatsu Ikegami | 2000-03-14 |
| 5288948 | Structure of a semiconductor chip having a conductive layer | Yasuhiro Fukuda, Tetsuhiko Sugahara, Mitsuhiro Matsuo, Minoru Saito, Masayuki Kobayakawa +1 more | 1994-02-22 |