Issued Patents All Time
Showing 25 most recent of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8524617 | Methods for manufacturing dielectric films | Takashi Nakagawa, Naomu Kitano | 2013-09-03 |
| 8415753 | Semiconductor device and method of manufacturing the same | Takashi Nakagawa, Naomu Kitano, Kazuaki Matsuo, Motomu Kosuda | 2013-04-09 |
| 8288234 | Method of manufacturing hafnium-containing and silicon-containing metal oxynitride dielectric film | Takuya Seino, Takashi Nakagawa, Naomu Kitano | 2012-10-16 |
| 8269303 | SiGe photodiode | Junichi Fujikata, Akihito Tanabe, Jun Ushida, Daisuke Okamoto, Kenichi Nishi | 2012-09-18 |
| 8203176 | Dielectric, capacitor using dielectric, semiconductor device using dielectric, and manufacturing method of dielectric | Takashi Nakagawa, Nobuyuki Ikarashi, Makiko Oshida | 2012-06-19 |
| 8178934 | Dielectric film with hafnium aluminum oxynitride film | Naomu Kitano, Takashi Nakagawa | 2012-05-15 |
| 8053311 | Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen | Takashi Nakagawa, Naomu Kitano | 2011-11-08 |
| 8030694 | Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen | Takashi Nakagawa, Naomu Kitano | 2011-10-04 |
| 7968463 | Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer | Takashi Nakagawa, Makiko Oshida, Nobuyuki Ikarashi, Kensuke Takahashi, Kenzo Manabe | 2011-06-28 |
| 7867847 | Method of manufacturing dielectric film that has hafnium-containing and aluminum-containing oxynitride | Naomu Kitano, Takashi Nakagawa | 2011-01-11 |
| 7701018 | Semiconductor device and method for manufacturing same | Shigeharu Yamagami, Hitoshi Wakabayashi, Kiyoshi Takeuchi, Atsushi Ogura, Masayasu Tanaka +4 more | 2010-04-20 |
| 7679148 | Semiconductor device, production method and production device thereof | Heiji Watanabe, Hirohito Watanabe, Shinji Fujieda | 2010-03-16 |
| 7612416 | Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same | Kiyoshi Takeuchi, Koichi Terashima, Hitoshi Wakabayashi, Shigeharu Yamagami, Atsushi Ogura +4 more | 2009-11-03 |
| 7592674 | Semiconductor device with silicide-containing gate electrode and method of fabricating the same | Kensuke Takahashi, Kenzo Manabe, Nobuyuki Ikarashi | 2009-09-22 |
| 7476916 | Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film | Nobuyuki Ikarashi | 2009-01-13 |
| 7354622 | Method for forming thin film and apparatus for forming thin film | Hiroshi Shinriki, Kenji Matsumoto | 2008-04-08 |
| 6790741 | Process for producing a semiconductor device | — | 2004-09-14 |
| 6665118 | Rear-projection screen and rear-projection image display | Hiroshi Yamaguchi, Kenichi Ikeda, Osamu Sakai, Satoshi Aoki | 2003-12-16 |
| 6573211 | Metal oxide dielectric film | — | 2003-06-03 |
| 6459126 | Semiconductor device including a MIS transistor | Tohru Mogami, Mitsuhiro Togo, Koji Watanabe, Toyoji Yamamoto, Nobuyuki Ikarashi +2 more | 2002-10-01 |
| 6372628 | Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device | Yoshihisa Matsubara, Ko Noguchi, Shinya Ito, Noriaki Oda, Akira Matsumoto +5 more | 2002-04-16 |
| 6180531 | Semiconductor manufacturing method | Yoshishige Matsumoto, Yoshitake Ohnishi, Kazuhiko Endo | 2001-01-30 |
| 6121120 | Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer | Hitoshi Wakabayashi | 2000-09-19 |
| 6091081 | Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film | Yoshihisa Matsubara, Ko Noguchi, Shinya Ito, Noriaki Oda, Akira Matsumoto +5 more | 2000-07-18 |
| 6077355 | Apparatus and method for depositing a film on a substrate by chemical vapor deposition | Atsushi Yamashita | 2000-06-20 |