Issued Patents All Time
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7977221 | Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the same | Masaharu Ninomiya, Koji Matsumoto, Masanobu Miyao | 2011-07-12 |
| 7767548 | Method for manufacturing semiconductor wafer including a strained silicon layer | Masaharu Ninomiya, Koji Matsumoto, Masanobu Miyao, Taizoh Sadoh | 2010-08-03 |
| 7253082 | Pasted SOI substrate, process for producing the same and semiconductor device | Naoshi Adachi | 2007-08-07 |
| 6372628 | Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device | Yoshihisa Matsubara, Ko Noguchi, Shinya Ito, Noriaki Oda, Akira Matsumoto +5 more | 2002-04-16 |
| 6091081 | Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film | Yoshihisa Matsubara, Ko Noguchi, Shinya Ito, Noriaki Oda, Akira Matsumoto +5 more | 2000-07-18 |
| 5296391 | Method of manufacturing a bipolar transistor having thin base region | Fumihiko Sato, Mitsuhiro Sugiyama, Tsutomu Tashiro | 1994-03-22 |
| 4963957 | Semiconductor device having bipolar transistor with trench | Susumu Ohi, Hiroshi Shiba | 1990-10-16 |
| 4800177 | Semiconductor device having multilayer silicide contact system and process of fabrication thereof | — | 1989-01-24 |
| 4191595 | Method of manufacturing PN junctions in a semiconductor region to reach an isolation layer without exposing the semiconductor region surface | Kunio Aomura, Fujiki Tokuyoshi | 1980-03-04 |