LL

Li-Chun Li

MV Mosel Vitelic: 32 patents #1 of 482Top 1%
FS Freeescale Semiconductor: 2 patents #1,335 of 3,767Top 40%
TI Texas Instruments: 2 patents #5,248 of 12,488Top 45%
IA Inventec Appliances: 1 patents #109 of 296Top 40%
I( Inventec Appliances (Pudong): 1 patents #24 of 91Top 30%
IC Inventec Appliances (Shanghai) Co.: 1 patents #19 of 82Top 25%
MH Macom Technology Solutions Holdings: 1 patents #148 of 265Top 60%
DL Dongguan Amperex Technology Limited: 1 patents #46 of 114Top 45%
PT Promos Technologies: 1 patents #115 of 311Top 40%
ST Sandisk Technologies: 1 patents #1,320 of 2,224Top 60%
TA Tyco Electronics Logistics Ag: 1 patents #64 of 200Top 35%
VI Vitelic: 1 patents #4 of 16Top 25%
NV NVIDIA: 1 patents #4,316 of 7,811Top 60%
Samsung: 1 patents #49,284 of 75,807Top 70%
BL Byd Company Limited: 1 patents #476 of 1,165Top 45%
📍 Cupertino, CA: #295 of 6,989 inventorsTop 5%
🗺 California: #8,490 of 386,348 inventorsTop 3%
Overall (All Time): #58,097 of 4,157,543Top 2%
48
Patents All Time

Issued Patents All Time

Showing 26–48 of 48 patents

Patent #TitleCo-InventorsDate
6355524 Nonvolatile memory structures and fabrication methods Hsing Tuan, Chung Wai Leung, Thomas Chang 2002-03-12
6191997 Memory burst operations in which address count bits are used as column address bits for one, but not both, of the odd and even columns selected in parallel. Jin Seung Son 2001-02-20
6172554 Power supply insensitive substrate bias voltage detector circuit Pochung Young 2001-01-09
6133597 Biasing an integrated circuit well with a transistor electrode Huoy-Jong Wu, Chung-Cheng Wu, Saysamone Pittikoun, Wen-Wei Lo 2000-10-17
6011737 DRAM with edge sense amplifiers which are activated along with sense amplifiers internal to the array during a read cycle Lawrence Liu, Michael A. Murray 2000-01-04
5986474 Data line bias circuit Jinyong Chung, Pochung Young 1999-11-16
5966338 Dram with new I/O data path configuration Lawrence Liu, Michael A. Murray 1999-10-12
5949722 I/O bias circuit insensitive to inadvertent power supply variations for MOS memory Lawrence Liu, Michael A. Murray 1999-09-07
5912571 Using the internal supply voltage ramp rate to prevent premature enabling of a device during power-up Lawrence Liu, Michael A. Murray 1999-06-15
5907257 Generation of signals from other signals that take time to develop on power-up Lawrence Liu, Michael A. Murray 1999-05-25
5889414 Programmable circuits Lynne Watters, Sharlin Fang 1999-03-30
5844296 Space saving laser programmable fuse layout Michael A. Murray, Lawrence Liu 1998-12-01
5838622 Reconfigurable multiplexed address scheme for asymmetrically addressed DRAMs Lawrence Liu, Michael A. Murray 1998-11-17
5838072 Intrachip power distribution package and method for semiconductors having a supply node electrically interconnected with one or more intermediate nodes Lawrence Liu, Michael A. Murray 1998-11-17
5828609 Simulated DRAM memory bit line/bit line for circuit timing and voltage level tracking Lawrence Liu, Michael A. Murray 1998-10-27
5812474 I/O bias circuit insensitive to inadvertent power supply variations for MOS memory Lawrence Liu, Michael A. Murray 1998-09-22
5781488 DRAM with new I/O data path configuration Lawrence Liu, Michael A. Murray 1998-07-14
5767737 Methods and apparatus for charging a sense amplifier Lawrence Liu, Michael A. Murray 1998-06-16
5768200 Charging a sense amplifier Lawrence Liu, Michael A. Murray 1998-06-16
5761112 Charge storage for sensing operations in a DRAM Michael A. Murray, Lawrence Liu 1998-06-02
5757710 DRAM with edge sense amplifiers which are activated along with sense amplifiers internal to the array during a read cycle Lawrence Liu, Michael A. Murray 1998-05-26
5440246 Programmable circuit with fusible latch Michael A. Murray, Hsing Tuan 1995-08-08
5245583 Integrated circuit memory with decoded address sustain circuitry for multiplexed address architecture and method Hsing Tuan, Lynne Hannah 1993-09-14